The absence of high-voltage stress on the device allows for practically infinite SOT-MRAM endurance even at the fastest, sub-ns write speeds. Furthermore, SOT-switching does not need to rely on thermal activation to initiate switching, which makes reliable sub-ns switching with no incubation delays inherently feasible. As a result, SOT-MRAM may be used as DRAM-like working memory or SRAM-like cache memory, which is impossible with STT-MRAM.
The SOT-MRAM Pioneer