The SOT-MRAM Pioneer

MRAM Overview

  • With the advent of mobile and handheld electronic devices, the demand for much smaller, faster and ultra-low power systems keeps growing. Yet to meet such needs, the microelectronics industry cannot rely anymore on following Moore’s law like it has for the last decades.
  • Embedded memories, which represent a major part of the circuits silicon area have now become a major contributor to power dissipation in integrated system circuits. To solve these issues, several technologies are intensively investigated to replace existing embedded memories (SRAM and Flash).
  • Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been chosen by the industry as the non-volatile memory technology of choice to replace Embedded Flash at advanced technology nodes.