Spin Orbit Torque Magnetic Random-Access Memory (SOT-MRAM) is the latest generation of MRAM. Unlike STT-MRAM, SOT offers unique system-level value thanks to its unique combination of high working speed and truly infinite endurance.
SOT-MRAM does not require passing of a high current through the magnetic device (the so-called Magnetic Tunnel Junction) during the Write operation, which is done by a current flowing through an adjacent "SOT" metal line.
- STT vs SOT - © antaios 2021
